r-1 plastic-encapsulate diodes 1 h igh diode semiconductor r-1 features i o 1a vrrm 20v-100v high surge current capability applications rectifier marking polarity: color band denotes cathode 1sxx xx:from 20 to 100 1s20 thru 1s100 1s item symbol unit conditions repetitive peak reverse voltage v rrm v average forward current i f(av) a 60hz half-sine wave, resistance 1.0 surge(non-repetitive)forward current i fsm a 60hz half-sine wave,1 cycle, ta=25 25 junction temperature t j -55~+125 storage temperature t stg -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified 1s item symbol unit test condition peak forward voltage v fm v i fm =1.0a 0.55 0.7 0.85 i rrm1 t a =25 0.1 peak reverse current i rrm2 ma v rm =v rrm t a =125 10 thermal resistance(typical) r j-a /w between junction and ambient 50 20 30 40 50 60 80 100 20 30 40 50 60 80 100 20 30 40 50 60 80 100 load, v 14 21 28 35 42 56 70 max i mum r m s v rms vo ltage schottky rectifier
typical characteristics 2 h igh diode semiconductor if(a) fig.3: typical forward characteristics tj=25 pulse width=300us 1% duty cycle 0.1 0.2 0.1 10 vf(v) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.0 20 1s20-1s40 1s80-1s100 1s50-1s60 fig.4: typical reverse characteristics voltage(%) ir(ma) tj=25 tj=125 tj=75 0.001 0.01 0 20 40 60 80 100 0.1 1.0 10 100 0 50 150 fig.1: forward current derating curve io(a) single phase half wave 60hz resistive or inductive load 0.375''(9.5mm) lead length 100 0.2 0.4 0.6 0.8 1.0 0 ifsm(a) number of cycles fig.2 : maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 1 2 10 20 100 10 20 30 40 50 1s20-1s60 1s8 0-1s100
3 h igh diode semiconductor r-1 dia unit: in inches (millimeters) dia 1.0(25.4) min .130(3.30) .118(3.00) .025(0.64) .021(0.53) .107(2.70) .080(2.00) 1.0(25.4) min
4 h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers
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